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TC2014/2015/2185
50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass
Features
* * * * * * * * * * * Low Supply Current: 80 A (Max) Low Dropout Voltage: 140 mV (Typ.) @ 150 mA High-Output Voltage Accuracy: 0.4% (Typ.) Standard or Custom Output Voltages Power-Saving Shutdown Mode Reference Bypass Input for Ultra Low-Noise Operation Fast Shutdown Response Time: 60 sec (Typ.) Overcurrent Protection Space-Saving 5-Pin SOT-23A Package Pin-Compatible Upgrades for Bipolar Regulators Wide Operating Temperature Range: -40C to +125C
General Description
The TC2014, TC2015 and TC2185 are high-accuracy (typically 0.4%) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 A; 20 to 60 times lower than in bipolar regulators. The key features of the device include low noise operation (plus bypass reference), low dropout voltage - typically 45 mV for the TC2014, 90 mV for the TC2015, and 140 mV for the TC2185, at full load - and fast response to step changes in load. Supply current is reduced to 0.5 A (max) and VOUT falls to zero when the shutdown input is low. These devices also incorporate overcurrent protection. The TC2014, TC2015 and TC2185 are stable with an output capacitor of 1 F and have maximum output currents of 50 mA, 100 mA and 150 mA, respectively. For higher-output versions, see the TC1107 (DS21356), TC1108 (DS21357) and TC1173 (DS21362) (IOUT = 300 mA) data sheets.
Applications
* * * * * * * Battery-Operated Systems Portable Computers Medical Instruments Instrumentation Cellular/GSM/PHS Phones Linear Post-Regulator for SMPS Pagers
Typical Application
VIN + 1 VIN VOUT 5 + 1 F 1 F VOUT
Related Literature
* Application Notes: AN765, AN766, AN776 and AN792
2
GND
Package Type
5-Pin SOT-23A
VOUT 5 Bypass 4 TC2014 TC2015 TC2185 1 VIN 2 3 3
TC2014 TC2015 TC2185
SHDN
Bypass
4 0.01 F Reference Bypass Cap (Optional)
Shutdown Control (from Power Control Logic)
GND SHDN
2004 Microchip Technology Inc.
DS21662D-page 1
TC2014/2015/2185
1.0 ELECTRICAL CHARACTERISTICS PIN FUNCTION TABLE
Name VIN GND SHDN Bypass VOUT Function Unregulated Supply Input Ground Terminal Shutdown Control Input Reference Bypass Input Regulated Voltage Output
Absolute Maximum Ratings
Input Voltage ................................................................... 7.0V Output Voltage ....................................... (- 0.3) to (VIN + 0.3) Operating Temperature ......................... - 40C < TJ < 125C Storage Temperature.................................. - 65C to +150C Maximum Voltage on Any Pin ................ VIN +0.3V to - 0.3V Maximum Junction Temperature ...................... ............ 150C Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, VIN = VR + 1V, IL = 100 A, COUT = 3.3 F, SHDN > VIH, TA = +25C. BOLDFACE type specifications apply for junction temperature of -40C to +125C. Parameters Input Operating Voltage Maximum Output Current Sym VIN IOUTMAX Min 2.7 50 100 150 Output Voltage VOUT Temperature Coefficient Line Regulation Load Regulation (Note 4) Dropout Voltage VOUT TCVOUT VOUT/VIN VOUT/VOUT VIN - VOUT VR - 2.0% -- -- -- -1.0 -2.0 -- -- -- -- Supply Current IIN -- Typ -- -- -- -- VR 0.4% 20 40 0.05 0.33 0.43 2 45 90 140 55 Max 6.0 -- -- -- VR + 2.0% -- -- 0.5 +1.0 +2.0 -- 70 140 210 80 A mV % % (VR + 1V) < VIN < 6V TC2014;TC2015: IL = 0.1 mA to IOUTMAX TC2185: IL = 0.1 mA to IOUTMAX (Note 4) Note 5 IL = 100 A IL = 50 mA TC2015; TC2185 IL = 100 mA TC2185 SHDN = VIH, IL = 0 IL = 150 mA V Units V mA Note 1 TC2014 TC2015 TC2185 Note 2 Conditions
ppm/C Note 3
Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT. 2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V. 3: -6 ( V OUTMAX - V OUTMIN ) x 10 TCV OUT = --------------------------------------------------------------------------V OUT x T 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal Regulation specification. 5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value. 6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 msec. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, JA). 8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN.
DS21662D-page 2
2004 Microchip Technology Inc.
TC2014/2015/2185
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, VIN = VR + 1V, IL = 100 A, COUT = 3.3 F, SHDN > VIH, TA = +25C. BOLDFACE type specifications apply for junction temperature of -40C to +125C. Parameters Shutdown Supply Current Power Supply Rejection Ratio Output Short Circuit Current Thermal Regulation Output Noise Response Time, (Note 8) (from Shutdown Mode) SHDN Input SHDN Input High Threshold SHDN Input Low Threshold VIH VIL 60 -- -- -- -- 15 %VIN %VIN VIN = 2.5V to 6.0V VIN = 2.5V to 6.0V Sym IINSD PSRR IOUTSC VOUT/PD eN TR Min -- -- -- -- -- -- Typ 0.05 55 160 0.04 200 60 Max 0.5 -- 300 -- -- -- Units A dB mA V/W SHDN = 0V F 1 kHz, Cbypass = 0.01 F VOUT = 0V Note 6, Note 7 Conditions
nV/Hz IL = IOUTMAX, F = 10 kHz 470 pF from Bypass to GND sec VIN = 4V, IL = 30 mA, CIN = 1 F, COUT = 10 F
Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT. 2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V. 3: -6 ( V OUTMAX - V OUTMIN ) x 10 TCV OUT = --------------------------------------------------------------------------V OUT x T 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal Regulation specification. 5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value. 6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 msec. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, JA). 8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN.
2004 Microchip Technology Inc.
DS21662D-page 3
TC2014/2015/2185
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 A, COUT = 3.3 F, SHDN > VIH, TA = +25C.
63.0
VIN = 6.0V
1.820 Output Voltage (V)
VR = 1.8V COUT = 3.3 F
VIN = 2.8V VIN = 6.0V
60.0 IDD (A) 57.0 54.0 51.0 48.0 45.0
1.815 1.810 1.805 1.800 1.795 1.790 1.785
VR = 1.8V COUT = 3.3 F IL = 150 mA
VIN = 2.8V
5
20
35
50
65
80
95
110
125
-40
-25
-10
5
20
35
50
65
80
95
110
110
Junction Temperature (C)
Junction Temperature (C)
FIGURE 2-1: Temperature.
0.8 Load Regulation (%) 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 2.8 3.2 3.6
VR = 1.8V COUT = 3.3 F IL = 150 mA
Supply Current vs. Junction
FIGURE 2-4: Temperature.
1.82
Output Voltage vs. Junction
TA = -45C
1.815
TA = +25C
TA = +25C TA = -45C TA = +125C
Output Voltage (V)
1.81 1.805 1.8 1.795 1.79 1.785
VR = 1.8V COUT = 3.3 F IL = 150 mA
TA = +125C
4
4.4
4.8
5.2
5.6
6
2.8
3.2
3.6
4
4.4
4.8
5.2
5.6
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-2: Voltage.
1.810 Output Voltage (V) 1.805 1.800 1.795 1.790
Load Regulation vs. Supply
FIGURE 2-5: Voltage.
0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00
Output Voltage vs. Supply
Dropout Voltage (V)
VR = 1.8V COUT = 3.3 F IL = 0.1 mA
VIN = 2.8V VIN = 6.0V
VR = 1.8V COUT = 3.3 F
IL = 150 mA IL = 100 mA
IL = 50 mA IL = 20 mA
Note: Dropout Voltage is not a tested parameter for 1.8V. VIN(min) 2.7V
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (C)
Junction Temperature (C)
FIGURE 2-3: Temperature.
Output Voltage vs. Junction
FIGURE 2-6: Dropout Voltage vs. Junction Temperature.
DS21662D-page 4
2004 Microchip Technology Inc.
125
5
20
35
50
65
80
-40
-25
-10
95
125 6
-40
-25
-10
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 A, COUT = 3.3 F, SHDN > VIH, TA = +25C.
60.0 58.0 56.0 IDD(A) 54.0 52.0 50.0 48.0 46.0 44.0 20 35 50 65 80 95 110 125 5 -40 -25 -10 2.705 2.700
VIN = 6.0V VIN = 2.8V VIN = 3.7V
Output Voltage (V)
VR = 2.7V COUT = 3.3 F
2.695 2.690 2.685 2.680 2.675 2.670 2.665 20 35 50 65 80 95 110 5.8 110 125 125 -40 -25 -10 5
VR = 2.7V COUT = 3.3 F IL = 150 mA VIN = 6.0V
Temperature (C)
Junction Temperature (C)
FIGURE 2-7: Temperature.
0.5 Load Regulation (%)
Supply Current vs. Junction
FIGURE 2-10: Temperature.
2.705
Output Voltage vs. Junction
Output Voltage (V)
0.3 0.1 -0.1 -0.3 -0.5 3.7 4 4.3 4.6 4.9 5.2
VR = 2.7V COUT = 3.3 F IL = 150 mA
TA = -45C TA = +25C
2.7 2.695 2.69 2.685 2.68 2.675 2.67 2.665
VR = 2.7V COUT = 3.3 F IL = 150 mA
TA = +25C
TA = -45C
TA = +125C
TA = +125C
5.5
5.8
3.7
4
4.3
4.6
4.9
5.2
5.5
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-8: Voltage.
2.690 2.688 2.686 2.684 2.682 2.680 2.678 2.676 2.674 2.672 2.670
Load Regulation vs. Supply
FIGURE 2-11: Voltage.
0.160
Output Voltage vs. Supply
VIN = 6.0V
Dropout Voltage (V)
VR = 2.7V COUT = 3.3 F
IL = 150 mA
Output Voltage (V)
0.120
IL = 100 mA
VIN = 3.7V
0.080
IL = 50 mA
VR = 2.7V COUT = 3.3 F IL = 0.1 mA
0.040 0.000
IL = 20 mA
5
20
35
50
65
80
95
110
125
5
20
35
50
65
80
-40
-25
-10
-40
-25
Junction Temperature (C)
-10
Junction Temperature (C)
FIGURE 2-9: Temperature.
Output Voltage vs. Junction
FIGURE 2-12: Dropout Voltage vs. Junction Temperature.
2004 Microchip Technology Inc.
DS21662D-page 5
95
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 A, COUT = 3.3 F, SHDN > VIH, TA = +25C.
60 57 IDD (A) 54 51 48 45 20 35 50 65 80 95 110 125 5 -40 -25 -10
VR = 5.0V COUT = 3.3 F
0.12 Dropout Voltage (V)
VIN = 6.0V
0.10 0.08 0.06 0.04 0.02 0.00
VR = 5.0V COUT = 3.3 F
IL = 150 mA
IL = 100 mA
IL = 50 mA
20
35
50
65
80
95
110
VOUT
Junction Temperature (C)
Junction Temperature (C)
FIGURE 2-13: Temperature.
5.01 5.00 Output Voltage (V) 4.99 4.98 4.97 4.96 4.95 4.94 4.93 5
VR = 5.0V COUT = 3.3 F VIN = 6.0V
Supply Current vs. Junction
FIGURE 2-16: Dropout Voltage vs. Junction Temperature.
VIN = 3.8V VOUT = 2.8V CIN = 1 F Ceramic COUT = 1 F Ceramic Frequency = 1 kHz
IL = 150 mA
100mV/DIV
IL = 100 mA
IL = 0.1 mA
Load Current
20
35
50
65
80
95
110
Junction Temperature (C)
FIGURE 2-14: Temperature.
0.40 Load Regulation (%) 0.30 0.20 0.10 0.00 -0.10 -0.20 -0.30 -0.40
VR = 5.0V COUT = 3.3 F VIN = 6.0 V
Output Voltage vs. Junction
125
-40
-25
-10
150mA Load 100mA
FIGURE 2-17: (COUT = 1 F).
VIN = 3.0V VOUT = 2.8V CIN = 1 F Ceramic COUT = 10 F Ceramic Frequency = 10 kHz
Load Transient Response.
IL = 150 mA
100mV / DIV
VOUT
IL = 100 mA IL = 50 mA
Load Current 150mA Load 100mA
5
20
35
50
65
80
95
110
Junction Temperature (C)
FIGURE 2-15: Load Regulation vs. Junction Temperature.
125
-40
-25
-10
FIGURE 2-18: (COUT = 10 F).
Load Transient Response.
DS21662D-page 6
2004 Microchip Technology Inc.
125
-40
-25
-10
5
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 A, COUT = 3.3 F, SHDN > VIH, TA = +25C.
FIGURE 2-19: (COUT = 1 F).
Line Transient Response.
FIGURE 2-22:
Wake-Up Response.
Power Supply Ripple Rejection (dB)
0 -10 -20 -30
IOUT = 150 mA VIN = 4.0V VINAC = 100 mV VOUTDC = 3.0V COUT = 1F Ceramic CBYPASS = 0.01 F Ceramic
VOUT 100mV/DIV
150mA
-40 -50 -60
IOUT = 100 mA
VIN = 3.105V VOUT = 3.006V CIN = 1 F Ceramic COUT = 10 F Ceramic RLOAD = 20
100mA
IOUT = 50 mA
-70 10 100 10k 100k 1M 10000 100000 100000 0 Frequency (Hz) 1k 1000
FIGURE 2-20: Load Transient Response in Dropout. (COUT = 10 F).
FIGURE 2-23: PSRR vs. Frequency (COUT = 1 F Ceramic).
Power Supply Ripple Rejection (dB) 0 -10 -20 -30
IOUT = 150 mA VIN = 4.0V VINAC = 100 mV VOUTDC = 3.0V COUT = 10 F Ceramic CBYPASS = 0.01 F Ceramic
-40 -50 -60 -70 10 10
IOUT = 100 mA
100
10k 100k 1M 10000 100000 100000 0 Frequency (Hz)
1k 1000
FIGURE 2-21:
Shutdown Delay Time.
FIGURE 2-24: PSRR vs. Frequency (COUT = 10 F Ceramic).
2004 Microchip Technology Inc.
DS21662D-page 7
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 A, COUT = 3.3 F, SHDN > VIH, TA = +25C.
Power Supply Ripple Rejection (dB) 0 -10 -20 -30 -40 -50 -60 -70 10 10 100 100 1k 1000 10k 100k 1M 10000 100000 100000 0
0.001 10 100 100 1k 1000 Frequency (Hz) 10k 100k 1M 10000 100000 100000 0
CBYPASS = 0.01 F
VIN = 4.0V VINAC = 100 mV VOUTDC = 3.0V CBYPASS = 0 F
COUT = 10 F Tantalum IOUT = 150 mA
10 10.000
Noise (V/ Hz)
1 1.000
VIN = 4.0V VOUTDC = 3.0V IOUT = 100 A CBYPASS = 470 pF
0.1 0.100 0.10 0.010
COUT = 1 F
COUT = 10 F
Frequency (Hz)
FIGURE 2-25: PSRR vs. Frequency (COUT = 10 F Tantalum).
FIGURE 2-26:
Output Noise vs. Frequency.
DS21662D-page 8
2004 Microchip Technology Inc.
TC2014/2015/2185
3.0 PIN DESCRIPTIONS
3.3 Shutdown Control Input (SHDN)
The descriptions of the pins are described in Table 3-1. The regulator is fully enabled when a logic-high is applied to SHDN. The regulator enters shutdown when a logic-low is applied to this input. During shutdown, the output voltage falls to zero and the supply current is reduced to 0.5 A (max).
TABLE 3-1:
Pin No. 1 2 3 4 5
PIN FUNCTION TABLE
Symbol VIN GND SHDN Bypass VOUT Description Unregulated supply input Ground terminal Shutdown control input Reference bypass input Regulated voltage output
3.4
Reference Bypass Input (Bypass)
3.1
Unregulated Supply Input (VIN)
Connect the unregulated input supply to the VIN pin. If there is a large distance between the input supply and the LDO regulator, some input capacitance is necessary for proper operation. A 1 F capacitor, connected from VIN to ground, is recommended for most applications.
Connecting a low-value ceramic capacitor to Bypass will further reduce output voltage noise and improve the Power Supply Ripple Rejection (PSRR) performance of the LDO. Typical values from 470 pF to 0.01 F are suggested. While smaller and larger values can be used, these affect the speed at which the LDO output voltage rises when input power is applied. The larger the bypass capacitor, the slower the output voltage will rise.
3.5
Regulated Voltage Output (VOUT)
3.2
Ground Terminal (GND)
Connect the output load to VOUT of the LDO. Also connect one side of the LDO output de-coupling capacitor as close as possible to the VOUT pin.
Connect the unregulated input supply ground return to GND. Also connect one side of the 1 F typical input decoupling capacitor close to this pin and one side of the output capacitor COUT to this pin.
2004 Microchip Technology Inc.
DS21662D-page 9
TC2014/2015/2185
4.0 DETAILED DESCRIPTION
4.1 Bypass Input
The TC2014, TC2015 and TC2185 are precision fixedoutput voltage regulators (if an adjustable version is needed, see the TC1070, TC1071 and TC1187 (DS21353) data sheet). Unlike bipolar regulators, the TC2014, TC2015 and TC2185 supply current does not increase with load current. In addition, the LDO's output voltage is stable using 1 F of ceramic or tantalum capacitance over the entire specified input voltage range and output current range. Figure 4-1 shows a typical application circuit. The regulator is enabled anytime the shutdown input (SHDN) is at or above VIH, and disabled (shutdown) when SHDN is at or below VIL. SHDN may be controlled by a CMOS logic gate or I/O port of a microcontroller. If the SHDN input is not required, it should be connected directly to the input supply. While in shutdown, the supply current decreases to 0.05 A (typical) and VOUT falls to zero volts. A 0.01 F ceramic capacitor, connected from the Bypass input to ground, reduces noise present on the internal reference, which, in turn, significantly reduces output noise. If output noise is not a concern, this input may be left unconnected. Larger capacitor values may be used, but the result is a longer time period to rated output voltage when power is initially applied.
4.2
Output Capacitor
A 1 F (min) capacitor from VOUT to ground is required. The output capacitor should have an Effective Series Resistance (ESR) of 0.01 to 5 for VOUT 2.5V, and 0.05. to 5 for VOUT < 2.5V. Ceramic, tantalum or aluminum electrolytic capacitors can be used. When using ceramic capacitors, X5R and X7R dielectric material are recommended due to their stable tolerance over temperature. However, other dielectrics can be used as long as the minimum output capacitance is maintained.
4.3
1 + + 1 F VIN VOUT 5 + 1 F VOUT
Input Capacitor
Battery
2
GND
TC2014 TC2015 TC2185
3
SHDN
Bypass
4 0.01 F Reference Bypass Cap (Optional)
A 1 F capacitor should be connected from VIN to GND if there is more than 10 inches of wire between the regulator and this AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitors can be used (since many aluminum electrolytic capacitors freeze at approximately -30C, solid tantalum are recommended for applications operating below -25C). When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques.
Shutdown Control (from Power Control Logic)
FIGURE 4-1:
Typical Application Circuit.
DS21662D-page 10
2004 Microchip Technology Inc.
TC2014/2015/2185
5.0
5.1
THERMAL CONSIDERATIONS
Power Dissipation
The PD equation can be used in conjunction with the PDMAX equation to ensure that regulator thermal operation is within limits. For example: Given: VINMAX VOUTMIN TJMAX = 3.0V +10% = 2.7V - 2.5% = +125C = +55C
The amount of power the regulator dissipates is primarily a function of input voltage, output voltage and output current. The following equation is used to calculate worst-case power dissipation.
ILOADMAX = 40 mA TAMAX Find:
EQUATION 5-1:
P D ( VINMAX - V OUTMIN )I LMAX Where: PD VINMAX ILMAX = Worst-case actual power dissipation = Maximum voltage on VIN
1. Actual power dissipation 2. Maximum allowable dissipation Actual power dissipation: PD = ( V INMAX - V OUTMIN )I LMAX [ ( 3.0 x 1.1 ) - ( 2.7 x 0.975 ) ]40 x 10 = -------------------------------------------------------------------------------------------220 = 26.7mW Maximum allowable power dissipation: T JMAX - T AMAX P DMAX = ------------------------------------- JA 125 - 55 = -------------------220 = 318mW In this example, the TC2014 dissipates a maximum of only 26.7 mW; far below the allowable limit of 318 mW. In a similar manner, the PD and PDMAX equations can be used to calculate maximum current and/or input voltage limits.
-3
VOUTMIN = Minimum regulator output voltage = Maximum output (load) current
The maximum allowable power dissipation (PDMAX) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) (+125C) and the thermal resistance from junction-to-air (JA). The 5-Pin SOT-23A package has a JA of approximately 220C/Watt when mounted on a typical two-layer FR4 dielectric copper-clad PC board.
EQUATION 5-2:
T JMAX - T AMAX P DMAX = ------------------------------------- JA Where all terms are previously defined.
5.2
Layout Considerations
The primary path of heat conduction out of the package is via the package leads. Therefore, layouts having a ground plane, wide traces at the pads and wide power supply bus lines combine to lower JA and, therefore, increase the maximum allowable power dissipation limit.
2004 Microchip Technology Inc.
DS21662D-page 11
TC2014/2015/2185
6.0
6.1
PACKAGING INFORMATION
Package Marking Information
&
represents part number code + temperature range and voltage (V) TC2014 PA PB PH PC PD PE PF PG PJ TC2015 RA RB RH RC RD RE RF RG RJ TC2185 UA UB UH UC UD UE UF UG UJ
1.8 2.5 2.6 2.7 2.8 2.85 3.0 3.3 5.0
represents year and 2-month period code represents lot ID number
DS21662D-page 12
2004 Microchip Technology Inc.
TC2014/2015/2185
5-Lead Plastic Small Outline Transistor (OT) (SOT23)
E E1
p B p1 D
n
1
c A A2
L
A1
Units Dimension Limits n Number of Pins p Pitch p1 Outside lead pitch (basic) Overall Height Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter Significant Characteristic A A2 A1 E E1 D L c B
MIN
INCHES* NOM 5 .038 .075 .046 .043 .003 .110 .064 .116 .018 5 .006 .017 5 5
MAX
MIN
.035 .035 .000 .102 .059 .110 .014 0 .004 .014 0 0
.057 .051 .006 .118 .069 .122 .022 10 .008 .020 10 10
MILLIMETERS NOM 5 0.95 1.90 0.90 1.18 0.90 1.10 0.00 0.08 2.60 2.80 1.50 1.63 2.80 2.95 0.35 0.45 0 5 0.09 0.15 0.35 0.43 0 5 0 5
MAX
1.45 1.30 0.15 3.00 1.75 3.10 0.55 10 0.20 0.50 10 10
Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC Equivalent: MO-178 Drawing No. C04-091
2004 Microchip Technology Inc.
DS21662D-page 13
TC2014/2015/2185
NOTES:
DS21662D-page 14
2004 Microchip Technology Inc.
TC2014/2015/2185
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device -XX Output Voltage X Temperature Range XXXX Package Examples:
a) b) c) TC2014-1.8VCTTR: 5LD SOT-23-A, 1.8V, Tape and Reel. TC2014-2.85VCTTR: 5LD SOT-23-A, 2.85V, Tape and Reel. TC2014-3.3VCTTR: 5LD SOT-23-A, 3.3V, Tape and Reel. TC2015-1.8VCTTR: 5LD SOT-23-A, 1.8V, Tape and Reel. TC2015-2.85VCTTR: 5LD SOT-23-A, 2.85V, Tape and Reel. TC2015-3.0VCTTR: 5LD SOT-23-A, 3.0V, Tape and Reel. TC2185-1.8VCTTR: 5LD SOT-23-A, 1.8V, Tape and Reel. TC2185-2.8VCTTR: 5LD SOT-23-A, 2.8V, Tape and Reel.
Device:
TC2014: TC2015: TC2185:
50 mA LDO with Shutdown and VREF Bypass 100 mA LDO with Shutdown and VREF Bypass 150 mA LDO with Shutdown and VREF Bypass
a)
Output Voltage: XX XX XX XX XX XX XX XX XX = = = = = = = = = 1.8V 2.5V 2.6V 2.7V 2.8V 2.85V 3.0V 3.3V 5.0V
b) c)
a) b)
Temperature Range:
V
= -40C to +125C
Package:
CTTR = Plastic Small Outline Transistor (SOT-23), 5-lead, Tape and Reel
Sales and Support
Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. Your local Microchip sales office The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com) to receive the most current information on our products.
2004 Microchip Technology Inc.
DS21662D-page 15
TC2014/2015/2185
NOTES:
DS21662D-page 16
2004 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices: * * Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable."
*
* *
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights.
Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2004, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper.
Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company's quality system processes and procedures are for its PICmicro(R) 8-bit MCUs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified.
2004 Microchip Technology Inc.
DS21662D-page 17
WORLDWIDE SALES AND SERVICE
AMERICAS
Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://support.microchip.com Web Address: www.microchip.com Atlanta Alpharetta, GA Tel: 770-640-0034 Fax: 770-640-0307 Boston Westford, MA Tel: 978-692-3848 Fax: 978-692-3821 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Kokomo Kokomo, IN Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 San Jose Mountain View, CA Tel: 650-215-1444 Fax: 650-961-0286 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509
ASIA/PACIFIC
Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8528-2100 Fax: 86-10-8528-2104 China - Chengdu Tel: 86-28-8676-6200 Fax: 86-28-8676-6599 China - Fuzhou Tel: 86-591-8750-3506 Fax: 86-591-8750-3521 China - Hong Kong SAR Tel: 852-2401-1200 Fax: 852-2401-3431 China - Shanghai Tel: 86-21-5407-5533 Fax: 86-21-5407-5066 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 China - Shenzhen Tel: 86-755-8203-2660 Fax: 86-755-8203-1760 China - Shunde Tel: 86-757-2839-5507 Fax: 86-757-2839-5571 China - Qingdao Tel: 86-532-502-7355 Fax: 86-532-502-7205
ASIA/PACIFIC
India - Bangalore Tel: 91-80-2229-0061 Fax: 91-80-2229-0062 India - New Delhi Tel: 91-11-5160-8631 Fax: 91-11-5160-8632 Japan - Kanagawa Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan - Kaohsiung Tel: 886-7-536-4818 Fax: 886-7-536-4803 Taiwan - Taipei Tel: 886-2-2500-6610 Fax: 886-2-2508-0102 Taiwan - Hsinchu Tel: 886-3-572-9526 Fax: 886-3-572-6459
EUROPE
Austria - Weis Tel: 43-7242-2244-399 Fax: 43-7242-2244-393 Denmark - Ballerup Tel: 45-4450-2828 Fax: 45-4485-2829 France - Massy Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany - Ismaning Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 England - Berkshire Tel: 44-118-921-5869 Fax: 44-118-921-5820
10/20/04
DS21662D-page 18
2004 Microchip Technology Inc.

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